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PSMN085-150K n-channel trenchmos siliconmax standard level fet rev. 02 ? 1 march 2010 product data sheet 1. product profile 1.1 general description siliconmax standard level n-ch annel enhancement mo de field-effect tran sistor (fet) in a plastic package using trenchmos technology. this product is designed and qualified for use in computing, communications, consum er and industrial applications only. 1.2 features and benefits ? low conduction losses due to low on-state resistance ? suitable for high frequency applications due to fast switching characteristics 1.3 applications ? computer motherboards ? dc-to-dc convertors ? switched-mode power supplies 1.4 quick reference data table 1. quick reference symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 150 c - - 150 v i d drain current t sp =80c; see figure 1 and 3 --3.5a p tot total power dissipation t sp =80c; see figure 2 --3.5w dynamic characteristics q gd gate-drain charge v gs =10v; i d =4.1a; v ds =75v; t j =25c; see figure 11 - 1217nc static characteristics r dson drain-source on-state resistance v gs =10v; i d =3.5a; t j =25c; see figure 9 and 10 - 6785m ?
PSMN085-150K_2 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 1 march 2010 2 of 13 nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet 2. pinning information 3. ordering information table 2. pinning information pin symbol description simplified outline graphic symbol 1s source sot96-1 (so8) 2s source 3s source 4g gate 5d drain 6d drain 7d drain 8d drain 4 5 1 8 s d g m bb076 table 3. ordering information type number package name description version PSMN085-150K so8 plastic small outline package; 8 leads; body width 3.9 mm sot96-1
PSMN085-150K_2 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 1 march 2010 3 of 13 nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet 4. limiting values table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 150 c - 150 v v gs gate-source voltage -20 20 v i d drain current t sp =80c; see figure 1 and 3 -3.5a i dm peak drain current t sp =25c; t p 10 s; pulsed; see figure 3 -40a p tot total power dissipation t sp =80c; see figure 2 -3.5w t stg storage temperature -55 150 c t j junction temperature -55 150 c source-drain diode i s source current t sp =80c - 3.1 a i sm peak source current t sp =25c; t p 10 s; pulsed - 40 a fig 1. normalized continuous drain current as a function of solder point temperature fig 2. normalized total power dissipation as a function of solder point temperature t sp ( c) 0 200 150 50 100 03aa25 40 80 120 i der (%) 0 t sp ( c) 0 200 150 50 100 03aa17 40 80 120 p der (%) 0
PSMN085-150K_2 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 1 march 2010 4 of 13 nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet 5. thermal characteristics fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage 03ae15 1 10 ? 1 10 10 2 i d (a) 10 ? 2 v ds (v) 1 10 3 10 2 10 100 ms 10 ms 1 ms 100 s t p = 10 s d.c. r dson = v ds /i d t p t p t p t t = table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; see figure 4 --20k/w fig 4. transient thermal impedance from junction to solder point as a function of pulse duration 03ae14 1 10 ? 1 10 10 2 z th(j-sp) (k/w) 10 ? 2 t p (s) 10 ? 4 10 2 10 1 10 ? 3 10 ? 1 10 ? 2 single pulse = 0.5 0.2 0.1 0.05 0.02 t p t p t p t t =
PSMN085-150K_2 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 1 march 2010 5 of 13 nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet 6. characteristics table 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j = 25 c 150 180 - v v gs(th) gate-source threshold voltage i d =1ma; v ds = v gs ; t j =-55c; see figure 8 --6v i d =1ma; v ds = v gs ; t j =25c; see figure 8 2- 4v i d =1ma; v ds = v gs ; t j = 150 c; see figure 8 1.2 - - v i dss drain leakage current v ds =120v; v gs =0v; t j =25c - - 1 a v ds =150v; v gs =0v; t j = 150 c - - 0.5 ma i gss gate leakage current v gs =20v; v ds =0v; t j = 25 c - - 100 na v gs =-20v; v ds =0v; t j = 25 c - - 100 na r dson drain-source on-state resistance v gs =10v; i d =3.5a; t j =150c; see figure 9 and 10 - 161 204 m ? v gs =10v; i d =3.5a; t j =25c; see figure 9 and 10 -6785m ? dynamic characteristics q g(tot) total gate charge i d =4.1a; v ds =75v; v gs =10v; t j =25c; see figure 11 -40-nc q gs gate-source charge - 4 - nc q gd gate-drain charge - 12 17 nc c iss input capacitance v ds =25v; v gs = 0 v; f = 1 mhz; t j =25c; see figure 12 - 1310 - pf c oss output capacitance - 170 - pf c rss reverse transfer capacitance -80-pf t d(on) turn-on delay time v ds =75v; r l =75 ? ; v gs =10v; r g(ext) =6 ? ; t j =25c; i d =1a -1330ns t r rise time - 17 30 ns t d(off) turn-off delay time - 52 80 ns t f fall time - 30 45 ns g fs transfer conductance v ds =15v; i d = 4.1 a; t j =25c; see figure 13 -14-s source-drain diode v sd source-drain voltage i s = 2.3 a; v gs =0v; t j =0c; see figure 14 -0.71.1v t rr reverse recovery time i s = 4.1 a; di s /dt = -100 a/s; v gs =0v; v ds =25v; t j =25c - 100 - ns q r recovered charge - 0.36 - c
PSMN085-150K_2 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 1 march 2010 6 of 13 nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 7. sub-threshold drain current as a function of gate-source voltage fig 8. gate-source threshold voltage as a function of junction temperature 03ae16 0 10 20 30 012345 v ds (v) i d (a) 4 v 3.5 v 5 v 4.5 v v gs = 10 v 03ae18 0 10 20 30 012345 v gs (v) i d (a) v ds > i d x r dson t j = 150 c 25 c 03aa35 v gs (v) 06 4 2 10 ? 4 10 ? 5 10 ? 2 10 ? 3 10 ? 1 i d (a) 10 ? 6 min typ max t j ( c) ? 60 180 120 060 03aa32 2 3 1 4 5 v gs(th) (v) 0 max typ min
PSMN085-150K_2 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 1 march 2010 7 of 13 nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet fig 9. drain-source on-state resistance as a function of drain current; typical values fig 10. normalized drain-source on-state resistance factor as a function of junction temperature fig 11. gate-source voltage as a function of gate charge; typical values fig 12. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 03ae17 0.05 0.1 0.15 0.2 0.25 0102030 i d (a) r dson ( ) t j = 25 c v gs = 4.5 v 5 v 10 v 3.5 v 4 v 03aa30 0 1 2 3 -60 0 60 120 180 t j ( c) a 03ae22 0 2 4 6 8 10 0153045 q g (nc) v gs (v) i d = 4.1 a t j = 25 c 120 v v dd = 30 v 75 v 03ae21 10 10 2 10 3 10 4 10 ? 1 1 10 10 2 v ds (v) c iss , c oss , c rss (pf) c iss c oss c rss
PSMN085-150K_2 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 1 march 2010 8 of 13 nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet fig 13. forward transconductance as a function of drain current; typical values fig 14. source current as a function of source-drain voltage; typical values 03ae19 0 10 20 30 0102030 i d (a) g fs (s) t j = 25 c 150 c v ds > i d x r dson 03ae20 0 10 20 30 0 0.4 0.8 1.2 v sd (v) i s (a) t j = 25 c 150 c v gs = 0 v
PSMN085-150K_2 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 1 march 2010 9 of 13 nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet 7. package outline fig 15. package outline sot96-1 (so8) unit a max. a 1 a 2 a 3 b p cd (1) e (2) (1) eh e ll p qz y w v references outline version european projection issue date iec jedec jeita mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 0.25 dimensions (inch dimensions are derived from the original mm dimensions) notes 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. 1.0 0.4 sot96-1 x w m a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 4 5 pin 1 index 1 8 y 076e03 ms-012 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.20 0.19 0.16 0.15 0.05 0.244 0.228 0.028 0.024 0.028 0.012 0.01 0.01 0.041 0.004 0.039 0.016 0 2.5 5 mm scale s o8: plastic small outline package; 8 leads; body width 3.9 mm sot96 -1 99-12-27 03-02-18
PSMN085-150K_2 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 1 march 2010 10 of 13 nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet 8. revision history table 7. revision history document id release date data sheet status change notice supersedes psmn085_150k_2 20100301 product data sheet - psmn085_150k-01 modifications: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. psmn085_150k-01 (9397 750 07898) 20010116 product specification - -
PSMN085-150K_2 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 1 march 2010 11 of 13 nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple de vices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 9.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the object ive specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the pr oduct specification.
PSMN085-150K_2 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 1 march 2010 12 of 13 nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet export control ? this document as well as the item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. trenchmos ? is a trademark of nxp b.v. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PSMN085-150K n-channel trenchmos siliconmax standard level fet ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 1 march 2010 document identifier: PSMN085-150K_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 10 contact information. . . . . . . . . . . . . . . . . . . . . .12

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